sti divot
本研究探討場發射金屬氧化半導電晶體(MOSFET)淺溝槽隔離絕緣層(ShallowTrenchIsolation,STI)與鄰近電晶體主動區的高度差(Step-height)對元件特性的影響。,STIdivotformationiseliminatedorsubstantiallyreducedbyemployingaverythinnitridepolishstoplayer,e...
Method of reducing sti divot formation during semi
- locos sti比較
- usg半導體
- sti淺溝槽
- 淺溝槽隔離
- 淺溝槽絕緣sti
- shallow trench isolation解釋
- shallow trench isolation中文
- sti usg
- shallow trench isolation半導體
- deep trench isolation
- usg半導體
- sti divot formation
- locos製程
- sti divot
- sti divot
- hump effect
- sti locos
- locos sti比較
- 淺溝槽隔離
- deep trench isolation process
- shallow trench isolation半導体
- shallow trench isolation中文
- pad oxide半導體
- 淺溝槽隔離
- 半導體contact via
Forsearchesusingbooleanlogic,thedefaultoperatorisANDwithleftassociativity.Note:thismeanssafetyORseatbeltissearchedas ...
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